Method for fabricating a recessed channel field effect transistor (FET) device

A recessed channel field effect transistor device comprising:

• a semiconductor substrate;
• a gate dielectric layer formed upon the semiconductor substrate;
• a gate electrode formed upon the gate dielectric layer to define a channel region within the semiconductor substrate;
• a pair of lightly doped extension regions formed into the semiconductor substrate and separated by the gate electrode and the channel region;
• and
• a pair of source/drain regions formed into the semiconductor substrate and separated by the channel region and the pair of lightly doped extension regions,
• wherein:
• the a channel region and the pair of lightly doped extension regions are recessed within the semiconductor substrate with respect to the pair of source/drain regions;
• and the pair of lightly doped extension regions has a different dopant concentration in comparison with the pair of source/drain regions.

A field effect transistor device, comprising:

• a semiconductor substrate with a recess region;
• a channel region in the recess region;
• a pair of source/drain regions formed into the semiconductor substrate and separated by the channel region;
• and
• a gate electrode electrically isolated on the channel region;
• wherein:
• the recess region is recessed within the semiconductor substrate with respect to the pair of source/drain regions.