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US 2006/0033154 A1Published application
MOSgated power semiconductor device with source field electrode
AssigneeInternational Rectifier Corporation
InventorsJianjun Cao, Timothy Henson, Naresh Thapar, Paul Harvey, David Kent
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Abstract
A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench, and a method for fabricating the device.
Claims20
A power semiconductor device comprising:
- a semiconductor body having a common conduction region of one conductivity, and a base region of another conductivity, said semiconductor body including a first surface;
- a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom;
- a first gate insulation adjacent one of said sidewalls;
- a first gate electrode adjacent said first gate insulation and spanning said base region;
- a second gate insulation adjacent the other of said sidewalls;
- a second gate electrode adjacent said second gate insulation and spanning said base region;
- a source field electrode having a first portion and a second portion, said first portion of said source field electrode being disposed between said first and said second gate electrodes and insulated from the same by an insulation body, and said second portion of said source field electrode being disposed below said first portion and said gate electrodes;
- a source region adjacent each sidewall of said trench;
- and
- a source contact electrically connected to said source field electrode and said source regions.
7 more elements
A MOSgated power semiconductor device comprising:
- an active area including at least one active cell, said active cell including at least one source region, a source contact electrode connected to said source region, a source field electrode electrically connected to said source contact and an insulated gate electrode adjacent one side of said source field electrode and a base region, said source field electrode extending to a depth below a depth of said insulated gate electrode and a height above a height of said insulated gate electrode, wherein said source field electrode and said insulated gate electrode reside within a common trench.
Dependencies are inferred from the claim text.