Method for manufacturing semiconductor device, and semiconductor device

A method for manufacturing a semiconductor device having a first region for memory elements and a second region for elements other than said memory elements on a substrate, said method comprising:

• forming a first interlayer dielectric film on the substrate;
• forming a first opening section in the first interlayer dielectric film over said first region, said first opening being made to reach the substrate;
• forming a second opening section in the first interlayer dielectric film over said second region, said second opening being made to reach the substrate;
• forming a first plug electrode in the first opening section and a second plug electrode in the second opening section;
• forming a ferroelectric capacitor on the first interlayer dielectric film, said ferroelectric capacitor covering and contacting said first plug electrode;
• forming a first wiring pattern on the first interlayer dielectric film, said first wiring pattern covering and contacting said second plug electrode;
• forming a second interlayer dielectric film on the first interlayer dielectric film and covering said ferroelectric capacitor and first wiring pattern;
• forming a third opening section in the second interlayer dielectric film over said second region, said third opening reaching said first wiring pattern;
• and
• forming a third plug electrode in said third opening section.