MRAM cell having shared configuration
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Wen Liu, Kuo-Ching Chiang, Horng-Huei Tseng, Denny Tang
Life of this patent
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Abstract
A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.
Claims41
An apparatus, comprising:
- two first magnetic layers each oriented over a substrate;
- a second magnetic layer interposing the two first magnetic layers;
- and
- two dielectric layers contacting opposing sides of the second magnetic layer and each interposing the second magnetic layer and one of the two first magnetic layers, wherein each of the first and second magnetic layers and the dielectric layers are non-parallel relative to the substrate.
An apparatus, comprising:
- a first magnetic layer;
- a first dielectric layer located adjacent the first magnetic layer;
- a second magnetic layer located adjacent the first dielectric layer and opposite the first magnetic layer;
- a second dielectric layer located adjacent the second magnetic layer and opposite the first dielectric layer;
- and
- a third magnetic layer located adjacent the second dielectric layer and opposite the second magnetic layer;
- wherein the first, second and third magnetic layers and the first and second dielectric layers are each located the substrate and non-parallel relative to a substrate.
An apparatus, comprising:
- a dual-bit MRAM cell located over a substrate and including a first-bit MRAM stack and a second-bit MRAM stack each oriented non-parallel relative to the substrate;
- wherein the first-bit MRAM stack includes:
- first and second magnetic layers;
- and
- a first dielectric layer interposing the first and second magnetic layers;
- and
- wherein the second-bit MRAM stack includes:
- the second magnetic layer;
- a third magnetic layer;
- and
- a second dielectric layer interposing the second and third magnetic layers.
An apparatus, comprising:
- a dual-bit MRAM cell located over a substrate and including first and second magnetic tunnel junction (MTJ) stacks which share a shared magnetic layer, the shared magnetic layer oriented substantially perpendicular to the substrate.
A method, comprising:
- exposing a portion of a substrate by forming a recess in a material layer located over the substrate, the recess having opposing first and second sidewalls;
- partially filling the recess by forming first and second magnetic layers each lining and conforming to the first and second recess sidewalls, respectively;
- partially filling the recess further by forming first and second dielectric layers each lining and conforming to the first and second magnetic layers, respectively;
- and
- substantially filling the recess by forming a third magnetic layer interposing and contacting the first and second dielectric layers.
Dependencies are inferred from the claim text.