US 2006/0033116 A1 · Gallium nitride based semiconductor light emitting diode and process for preparing the same

Abstract

The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode and a process for preparing the same. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In2O3 including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency.

Claims23

Dependent claims

A gallium nitride based semiconductor light emitting diode comprising:

a substrate for growing a gallium nitride based semiconductor material;
a lower clad layer formed on the substrate and made of a first conductive gallium nitride based semiconductor material;
an active layer formed on the lower clad layer at a predetermined region thereof and made of an undoped gallium nitride based semiconductor material;
an upper clad layer formed on the active layer and made of a second conductive gallium nitride based semiconductor material;
an ohmic contact forming layer formed on the upper clad layer and made of In2O3 including at least one of Zn, Mg and Cu;
a transparent electrode layer formed on the upper part of the ohmic contact forming layer;
and
first and second electrodes formed on the lower and upper clad layers, respectively.

5 more elements

Dependencies are inferred from the claim text.

Gallium nitride based semiconductor light emitting diode and process for preparing the same

Life of this patent

Gallium nitride based semiconductor light emitting diode and process for preparing the same

Life of this patent

Abstract

Claims23