Film forming apparatus and film forming method
AssigneeTokyo Electron Limited
InventorMasamichi Hara
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AssigneeTokyo Electron Limited
InventorMasamichi Hara
Estimating the term…
A thin film formation apparatus that introduces, in a first operational phase thereof, a source gas into a processing vessel capable of being evacuated and accommodating a substrate to be processed, and forms a thin film on the substrate by causing a reaction in the introduced source gas. The apparatus comprises a source gas producing part producing the source gas by vaporizing a source material of solid or liquid, a source gas supplying path forwarding the source gas produced in the source gas producing part to the processing vessel, a first open/close valve provided on the source gas supplying path, the first open/close valve taking an opened state in the first operational phase, and a carrier gas supply part supplying a carrier gas to the source gas producing part such that the source gas fills a part of the source gas supplying path at an upstream side of the first open/close valve and the source gas producing part with a quantity exceeding a predetermined value, immediately before the first open/close valve becoming an opened state.
A thin film formation apparatus that introduces, in a first operational phase thereof, a source gas into a processing vessel capable of being evacuated and accommodating therein a substrate to be processed, and forms a thin film on said substrate by causing a reaction in said introduced source gas, comprising:
The thin film forming apparatus as claimed in claim 11, wherein said carrier gas supplying part comprises:
A thin film formation method for forming a thin film on a substrate by introducing a source gas into a processing vessel in a first phase of operation by causing a reaction in said source gas, said processing vessel being capable of depressurized and accommodating therein a substrate to be processed, said method comprising:
Dependencies are inferred from the claim text.