Method and apparatus for forming silicon oxide film

An apparatus for forming a silicon oxide film by CVD on a target substrate including a metal surface, the apparatus comprising:

• a process container having a process field configured to accommodate a target substrate;
• an Si-containing gas supply circuit configured to supply an Si-containing gas to the process field;
• an oxidizing gas supply circuit configured to supply an oxidizing gas to the process field;
• a deoxidizing gas supply circuit configured to supply a deoxidizing gas to the process field;
• a control section configured to control an operation of the apparatus,
• wherein, in order to form a silicon oxide film on the metal surface, the control section alternately executes
• a first step of performing supply of the Si-containing gas to the process field while stopping supply of the oxidizing gas and the deoxidizing gas to the process field;
• a second step of stopping supply of the Si-containing gas, the oxidizing gas, and the deoxidizing gas to the process field;
• a third step of performing supply of the oxidizing gas and the deoxidizing gas to the process field at the same time, while stopping supply of the Si-containing gas to the process field;
• and
• a fourth step of stopping supply of the Si-containing gas, the oxidizing gas, and the deoxidizing gas to the process field.

A computer readable medium containing program instructions for execution on a processor, which is used for a process apparatus for forming a silicon oxide film by CVD on a target substrate including a metal surface, in a process field configured to be selectively supplied with an Si-containing gas, an oxidizing gas, and deoxidizing gas, wherein the program instructions, when executed by the processor, cause the apparatus to execute

• a first step of performing supply of the Si-containing gas to the process field while stopping supply of the oxidizing gas and the deoxidizing gas to the process field;
• a second step of stopping supply of the Si-containing gas, the oxidizing gas, and the deoxidizing gas to the process field;
• a third step of performing supply of the oxidizing gas and the deoxidizing gas to the process field at the same time, while stopping supply of the Si-containing gas to the process field;
• and
• a fourth step of stopping supply of the Si-containing gas, the oxidizing gas, and the deoxidizing gas to the process field.