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AssigneeCree, Inc.
InventorsStephan Mueller, Adrian Powell, Valeri Tsvetkov
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A silicon carbide seeded sublimation growth system and associated method are disclosed. The system includes a crucible, a silicon carbide source composition in the crucible, a seed holder in the crucible, a silicon carbide seed crystal on the seed holder, means for creating a major thermal gradient in the crucible that defines a major growth direction between the source composition and the seed crystal for encouraging vapor transport between the source composition and the seed crystal, and the seed crystal being positioned on the seed holder with the macroscopic growth surface of the seed crystal forming an angle of between about 70° and 89.5° degrees relative to the major thermal gradient and the major growth direction and with the crystallographic orientation of the seed crystal having the c-axis of the crystal forming an angle with the major thermal gradient of between about 0° and 2°.
A silicon carbide growth system comprising:
A silicon carbide growth system comprising:
A silicon carbide growth system according to claim. 7 wherein said seed crystal has a polytype selected from the group consisting of the 4H and 6H polytypes of silicon carbide.
A seeded sublimation method of growing large single crystals of silicon carbide with reduced defects, the method comprising:
A seeded sublimation method of growing large single crystals of silicon carbide with reduced defects, the method comprising:
A seeded sublimation method of growing large single crystals of silicon carbide with reduced defects, the method comprising:
Dependencies are inferred from the claim text.