Single-wafer type heat treatment apparatus for semiconductor processing system

A single-substrate heat-processing apparatus for a semiconductor processing system, the apparatus comprising;

• a process container configured to accommodate a target substrate;
• a support member configured to support the target substrate substantially in a horizontal state within the process container, while a bottom surface of the target substrate is exposed;
• a heating gas supply section configured to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate;
• and
• a distribution member disposed within a flow passage of the heating gas supplied from the heating gas supply section, and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate,
• wherein the support member comprises a support plate having an opening slightly smaller than the target substrate, and the target substrate is placed on the support plate during a heat process such that the bottom surface is exposed from the opening,
• wherein the support plate is disposed to divide an interior of the process container into a process chamber on an upper side and a heating chamber on a lower side, and the target substrate is placed on the support plate during the heat process such that the opening is closed by the target substrate to prevent the heating gas from flowing from the heating chamber into the process chamber, and
• wherein the apparatus further comprises an exhaust passage for exhausting the heating gas from the heating chamber, and the exhaust passage comprises a plurality of exhaust pipes disposed at intervals in a horizontal plane and penetrate the distribution member.