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US 2006/0030127 A1Published application
Method of fabricating semiconductor device
AssigneeFujitsu Limited
InventorsNorio Fukasawa, Hirohisa Matsuki, Kenichi Nagashige, Yuzo Hamanaka, Muneharu Morioka
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Abstract
A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.
Claims1
A method of fabricating a semiconductor device, comprising the steps of:
- forming a resin layer on a principal surface of a semiconductor substrate carrying thereon a plurality of bump electrodes, such that said resin layer seals said principal surface of said semiconductor chip;
- grooving said resin layer along a dicing line on said semiconductor substrate by a first blade having a first blade width, to form a groove such that said groove penetrates through said resin layer and reaches said semiconductor substrate;
- and
- dicing, after said step of grooving, said semiconductor substrate along said groove by a second blade having a second blade width smaller than said first blade width, such that said semiconductor substrate is divided into individual semiconductor chips.
1 more element
Dependencies are inferred from the claim text.