Silicide formation using a metal-organic chemical vapor deposited capping layer
OwnerMei-Yun Wang, Chih-Wei Chang +3inventors
InventorsMei-Yun Wang, Chih-Wei Chang, Cheng-Tung Lin, Chii-Ming Wu, Shau-Lin Shue
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Abstract
A self-aligned silicide method for integrated circuit and semiconductor device fabrication wherein a metal layer is formed over one or more silicon regions of a substrate and a barrier metal layer is formed over the metal layer using a chemical vapor deposition process. The temperature at which the chemical vapor deposition process is performed causes the metal layer to react with the one or more silicon regions of the substrate to form a metal-silicide film over each of the silicon regions.
Claims18
A silicide method for integrated circuit and semiconductor device fabrication, the method comprising the steps of:
- providing a substrate having at least one silicon region;
- forming a layer of metal over the at least one silicon region of the substrate;
- and
- chemical vapor depositing a barrier metal layer over the metal layer,
- wherein the chemical vapor depositing step causes the metal layer to react with the at least one silicon region of the substrate to form a metal-silicide film thereover.
A method of fabricating a metal-silicide film, the method comprising the steps of:
- forming a layer of metal over at least one silicon region of a substrate;
- and
- chemical vapor depositing a barrier metal layer over the metal layer, the chemical vapor depositing step causing the metal layer to react with the at least one silicon region of the substrate to form the metal-silicide film thereover.
Dependencies are inferred from the claim text.