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AssigneeSony Corporation
InventorsHiroshi Horikoshi, Takeshi Nogami, Shuzo Sato, Shingo Takahashi, Naoki Komai, Kaori Tai, Hiizu Ohtorii
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A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.
A polishing method comprising the steps of:
A polishing apparatus for polishing a metallic film formed on a substrate in an electrolytic solution, said apparatus comprising:
A method of manufacturing a semiconductor device, comprising the steps of providing an insulation film formed on a substrate with wiring trenches for forming metallic wirings, forming a metallic film on said insulation film so as to fill up said wiring trenches, and polishing said metallic film formed on said insulation film, wherein
Dependencies are inferred from the claim text.