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AssigneeNanya Technology Corporation
InventorsMeng-Hung Chen, Shian-Jyh Lin, Chia-Sheng Yu
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A method for forming a self-aligned contact on a semiconductor substrate provided with a plurality of field-effect transistors. The method comprises the steps of forming a first insulating layer comprising a nitride along a profile of a gate structure and a junction region, forming a temporary layer comprising a doped oxide on the first insulating layer, removing a portion of the temporary layer by performing a selective etch of the oxide with a mask while leaving a plug portion of the temporary layer over the junction region, forming a second insulating layer comprising an undoped oxide in a region where the portion of the temporary layer is removed, removing the plug portion by performing a selective etch of the undoped oxide to form a contact hole, removing a portion of the first insulating layer at a bottom of the contact hole, and forming a conductive contact in the contact hole.
A method for forming a self-aligned contact in a semiconductor device, comprising the steps of:
(canceled)
A method for forming a self-aligned contact in a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.