Semiconductor integrated circuit device
AssigneeRohm Co., Ltd.
InventorsKo Takemura, Kenji Otani
Life of this patent
Estimating the term…
Abstract
To a plurality of terminals are connected, one to one, a plurality of current mirror circuits each having a first load portion through which a first current flows when an overvoltage is applied and a second load portion through which a second current proportional to the first current flows. The first load portion of the current mirror circuit connected to one of the plurality of terminals is shared as the first load portions of the current mirror circuits connected to the others of the plurality of terminals. The shared first load portion includes an overvoltage protection circuit. The second load portions of the current mirror circuits connected to the plurality of terminals each include an overvoltage detection circuit for detecting the second current.
Claims3
1-8. (canceled)
A method of fabricating a semiconductor integrated circuit device including a plurality of circuits, each composed of a protection diode and a current mirror circuit consisting of first and second transistors having bases thereof connected together, having emitters thereof connected together, and having the emitters thereof connected to an anode of the protection diode, and a plurality of terminals connected one to one to the circuits, comprising the steps of:
- forming the anode of the protection diode on the semiconductor integrated circuit device;
- forming a cathode of the protection diode so as to surround the anode thereof;
- forming a collector of the first transistor so as to surround about a half of the anode within a region surrounded by the cathode;
- forming a collector of the second transistor so as to surround about another half of the anode;
- and
- forming the bases of the first and second transistors as a common base so as to be substantially parallel to an edge of the collectors of the first and second transistors.
Dependencies are inferred from the claim text.