US 2005/0233589 A1 · Processes for removing residue from a workpiece

Abstract

In a process for removing etch residue, liquid including an acid and an oxidizer is applied to the back side and peripheral edge of a wafer. The front or device side of the wafer is left unprocessed, or may be exposed to an inert fluid such as a purge gas (e.g., nitrogen or helium), to a rinse such as deionized water, or to another processing fluid such as a more highly diluted etchant. The front side of the wafer is either left unprocessed, or is processed to a lesser degree without damage to the underlying devices, metal interconnects or semiconductor layers.

Claims20

Dependent claims

A method for processing a semiconductor wafer, comprising:

dry plasma etching a front side of the semiconductor wafer, with the dry plasma etching leaving a residue on a back side of the wafer;
removing the residue from the back side of the wafer by:
spinning the wafer;
applying a liquid to the back side of the spinning wafer, with the liquid comprising de-ionized water, an acid and an oxidizer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

11/151,896Filed 14 Jun 2005

Priority

13 Mar 1998

Published

20 Oct 2005

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 50/283
Of inorganic materials: by chemical means
H10P 50/667
By chemical means only: by liquid etching only
H10P 72/0414
For wet cleaning or washing: using mainly spraying means, e.g. nozzles
H10P 72/0424
For wet etching: using mainly spraying means, e.g. nozzles

Family

Application09/041,649Continuation in part · filed 13 Mar 1998

Application09/041,901Continuation in part · filed 13 Mar 1998

Application09/113,435Continuation in part · filed 10 Jul 1998

Application60/116,750Us provisional application · filed 22 Jan 1999

Application60/117,474Us provisional application · filed 27 Jan 1999

Application09/437,926Continuation in part · filed 10 Nov 1999

Application09/437,926Continuation · filed 10 Nov 1999

Application09/672,572Division · filed 28 Sep 2000

Application09/672,572Continuation in part · filed 28 Sep 2000

Application10/632,495Continuation · filed 31 Jul 2003

Application10/632,495Division · filed 31 Jul 2003