Method for fabricating semiconductor device

A method for fabricating a semiconductor device for reducing coupling noise between metal wiring leads, the method comprising the steps of:

• i) forming a plurality of lower metal wiring leads spaced from each other by a predetermined distance and arranged on a semiconductor substrate;
• ii) forming a first insulating interlayer on an entire surface of the semiconductor substrate so that the lower metal wiring leads are covered with the first insulating interlayer;
• and
• iii) forming a plurality of upper metal wiring leads spaced from each other by a predetermined distance and arranged on the first insulating interlayer;
• and
• iv) forming a second insulating interlayer on the first insulating interlayer so that the upper metal wiring leads are covered with the second insulating interlayer, wherein conductive impurities having a polarity opposite to each other are ion-implanted into both side end layers of the first insulating interlayer between the lower metal wiring leads, in both side end layers of the first insulating interlayer and in the second insulating interlayer between the lower metal wiring leads and the upper metal wirings, and in both side end layers of the second insulating interlayer between the upper metal wiring leads.