US 2005/0233554 A1 · Manufacturing method for semiconductor device and semiconductor manufacturing apparatus

Abstract

The present invention provides a technology for suppressing occurrence of abnormality on a surface of a silicon film other than a single crystal film formed on a wafer. A silicon film is formed on a wafer in step S1 and an oxide film functioning as an abnormality suppression film for suppressing the surface abnormality is formed on the silicon surface on the wafer formed in step S10. The abnormality suppression film is formed by the surface oxidation of the polycrystalline silicon using chemical solution such as ozone water or hydrogen peroxide solution. After forming the abnormality suppression film on the silicon surface, the abnormality suppression film, for example, an abnormal growth suppression film is removed according to need, and then the process of patterning the silicon film and forming an insulating oxide film is performed.

Claims11

Dependent claims

A manufacturing method for a semiconductor device, comprising the steps of:

forming a polycrystalline or amorphous silicon layer over a wafer;
and
forming a thin silicon oxide film functioning to suppress surface abnormality of said silicon layer on a surface of said silicon layer immediately after forming said silicon layer.

Dependencies are inferred from the claim text.

Facts

Application

11/108,736Filed 19 Apr 2005

Priority

JP 2004-12467720 Apr 2004

Published

20 Oct 2005

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10P 14/69215
Containing silicon: the material being a silicon oxide, e.g. SiO2
H10D 30/6891
Floating-gate IGFETs: characterised by the shapes, relative sizes or dispositions of the floating gate electrode
H10D 64/01306
Characterised by the conductor: the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
H10D 86/00
Integrated devices formed in or on insulating or conducting substrates

Manufacturing method for semiconductor device and semiconductor manufacturing apparatus

Life of this patent

Manufacturing method for semiconductor device and semiconductor manufacturing apparatus

Life of this patent

Abstract

Claims11