Semiconductor device having multiple work functions and method of manufacture therefor

A method for manufacturing an integrated circuit, comprising:

• forming transistors over a semiconductor substrate, including;
• forming a metal gate electrode material over the semiconductor substrate, wherein the metal gate electrode material has a work function;
• subjecting at least a portion of the metal gate electrode material to a plasma process, the plasma process causing the portion to have a different work function;
• and
• patterning the metal gate electrode material having the work function and patterning the portion of the metal gate electrode material having the different work function to form a first gate electrode having the work function and a second gate electrode having the different work function;
• and
• forming interconnects within dielectric layers located over the transistors to form an operational integrated circuit.