US 2005/0233532 A1 · Method of forming sidewall spacers

Abstract

The present invention allows the formation of sidewall spacers adjacent a feature on a substrate without there being an undesirable erosion of the feature. The feature is covered by one or more protective layers. A layer of a spacer material is deposited over the feature and etched anisotropically. An etchant used in the anisotropic etching is adapted to selectively remove the spacer material, whereas the one or more protective layers are substantially not affected by the etchant. Thus, the one or more protective layers protect the feature from being exposed to the etchant.

Claims34

Dependent claims

A method of forming sidewall spacers, comprising:

forming a feature over a substrate, said feature having a side surface and a top surface, said top surface being covered by a first protective layer and a coating layer formed above said first protective layer;
forming a second protective layer over said side surface and said substrate;
removing said coating layer;
conformally depositing a layer of a spacer material over said substrate and said side surface and above said top surface;
and
anisotropically etching said layer of spacer material.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/039,084Filed 19 Jan 2005

Priority

DE 10 2004 015 864.931 Mar 2004

Published

20 Oct 2005

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials
H10D 30/0227
Having source and drain regions or source and drain extensions self-aligned to sides of the gate: having both lightly-doped source and drain…
H10P 50/71
Etching of wafers, substrates or parts of devices: using masks for conductive or resistive materials
H10D 30/601
Insulated-gate field-effect transistors [IGFET]: having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs

Method of forming sidewall spacers

Life of this patent

Method of forming sidewall spacers

Life of this patent

Abstract

Claims34