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US 2005/0233530 A1Published application
Enhanced gate structure
OwnerJohn Barnak, Mark Doczy +2inventors
InventorsJohn Barnak, Mark Doczy, Robert Chau, Collin Borla
Life of this patent
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Abstract
A technique for producing an enhanced gate structure having a silicon-nitride buffer. Embodiments relate to the structure and development of a gate structure having a silicon-nitride buffer layer deposited upon a dielectric layer, upon which a gate material, such as polysilicon, is deposited.
Claims13
A method comprising:
- forming a dielectric layer upon a semiconductor substrate;
- forming a silicon-nitride layer upon the dielectric layer;
- forming a polysilicon layer upon the silicon-nitride layer.
A process for forming a semiconductor device comprising:
- forming a substrate;
- forming a dielectric layer having a dielectric constant greater than twenty upon the substrate;
- forming a polysilicon layer, the polysilicon layer being coupled to the dielectric layer by a buffer layer to help prevent electrical shorts between the polysilicon layer and the dielectric layer.
Dependencies are inferred from the claim text.