ONO formation method
AssigneeSkymedi Corporation
InventorFuja Shone
Life of this patent
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Abstract
An ONO formation method comprises the following procedures. First, a bottom oxide layer is formed on a silicon substrate, and then a silicon-rich nitride layer is deposited on the bottom oxide layer. Then, an oxidation process is performed to react with silicon atoms in the silicon-rich nitride layer, so as to form a top oxide layer. Alternatively, the silicon-rich layer can be replaced with a combination of a nitride layer and a polysilicon layer. The oxidation process can consume the polysilicon layer into the top oxide layer, and proper oxygen is introduced into the nitride layer.
Claims11
1-10. (canceled)
A method for forming an oxide-nitride-oxide layer in a non-volatile memory device, comprising the steps of:
- providing a silicon substrate;
- forming a bottom oxide layer on the silicon substrate;
- depositing a nitride layer on the bottom oxide layer;
- depositing a polysilicon layer on the nitride layer;
- and
- performing an oxidation process to react with the polysilicon layer, so as to form a top oxide layer.
A method for forming an oxide-nitride-oxide layer in a non-volatile memory device, comprising the steps of:
- providing a silicon substrate;
- forming a bottom oxide layer on the silicon substrate;
- depositing a polysilicon layer on the bottom oxide layer;
- depositing a nitride layer on the polysilicon layer;
- and
- performing an oxidation process, so as to form a top oxide layer.
Dependencies are inferred from the claim text.