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US 2005/0233259 A1Published application
Resist material and pattern formation method using the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasayuki Endo, Masaru Sasago
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Abstract
After forming a resist film including titanium oxide on a substrate, pattern exposure is performed by selectively irradiating the resist film with light of a wavelength of 400 nm or less or an electron beam. After the pattern exposure, the resist film is developed, so as to form a resist pattern made of the resist film.
Claims11
A resist material comprising titanium oxide.
A pattern formation method comprising the steps of:
- forming a resist film including titanium oxide on a substrate;
- performing pattern exposure by selectively irradiating said resist film with light of a wavelength of 400 nm or less or an electron beam;
- and
- forming a resist pattern made of said resist film by developing said resist film after the pattern exposure.
1 more element
A pattern formation method comprising the steps of:
- forming an organic film on a substrate;
- forming a first resist film including titanium oxide on said organic film;
- performing pattern exposure by selectively irradiating said first resist film with light of a wavelength of 400 nm or less or an electron beam;
- forming a resist pattern made of said first resist film by developing said first resist film after the pattern exposure;
- and
- forming a pattern by etching said organic film with said resist pattern used as a mask.
3 more elements
Dependencies are inferred from the claim text.