Apparatus and method for correcting pattern dimension and photo mask and test photo mask

An apparatus for correcting pattern dimension that corrects local flares occurring in an exposing apparatus in fabricating a semiconductor device, the apparatus comprising:

• fluctuation amount evaluation unit for evaluating the amount of the dimension fluctuation to the amount of said flares using parameters of the pattern widths of evaluation patterns and the distances from said evaluation patterns to most adjacent patterns;
• and
• correction unit for changing the amount of correction for each pattern to be actually formed, on the basis of a table defining said ratio of the dimension fluctuation.

A method for correcting pattern dimension that corrects local flares occurring in an exposing apparatus in fabricating a semiconductor device;

• wherein the amount of correction is varied for each pattern to be actually formed, on the basis of a table defining the amount of the dimension fluctuation to the amount of said flares with parameters of the pattern widths of evaluation patterns and the distances from said evaluation patterns to most adjacent patterns.

A method for correcting pattern dimension that corrects local flares occurring in an exposing apparatus in fabricating a semiconductor device, the method comprising the steps of:

• evaluating the amount of the dimension fluctuation to the amount of said flares using parameters of the pattern widths of evaluation patterns and the distances from said evaluation patterns to most adjacent patterns;
• and
• changing the amount of correction for each pattern to be actually formed, on the basis of a table defining said ratio of the dimension fluctuation.

A photo mask fabricated using a method for correcting pattern dimension that corrects local flares occurring in an exposing apparatus in fabricating a semiconductor device, said method comprising the steps of:

• evaluating the amount of the dimension fluctuation to the amount of said flares using parameters of the pattern widths of evaluation patterns and the distances from said evaluation patterns to most adjacent patterns;
• and
• changing the amount of correction for each pattern to be actually formed, on the basis of a table defining said amount of the dimension fluctuation.

A method for exposing light onto an active region of a semiconductor substrate to transfer pattern;

• wherein a first mask pattern to be transferred to said active region has a mask line width including an amount of correction, the amount of correction being calculated on the basis of a predetermined correction table, in relation to the distance dimension to a second mask pattern which is adjacent to said first mask pattern within the same active region;
• and
• said correction table is created from measured values of patterns formed by transferring patterns on a test photo mask onto a test substrate, said test photo mask including a plurality of flare generation patterns having different opening ratios and evaluation patterns having at least line shapes.