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US 2005/0232006 A1Published application
Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorYoshihisa Iwata
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Abstract
There is disclosed a magnetic random access memory according to an example of the present invention, comprising first and second write lines which intersect with each other, and a plurality of magneto resistive elements stacked on an intersecting portion of the first and second write lines, wherein easy axis directions of magnetizations of storage layers of the plurality of magneto resistive elements are different from each other.
Claims20
A magnetic random access memory comprising:
- first and second write lines which intersect with each other;
- and
- a plurality of magneto resistive elements stacked on an intersecting portion of the first and second write lines,
- wherein easy axis directions of magnetizations of storage layers of the plurality of magneto resistive elements are different from each other.
1 more element
Dependencies are inferred from the claim text.