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US 2005/0229965 A1Published application
Photoelectric conversion device and manufacturing method thereof
AssigneeSharp Kabushiki Kaisha
InventorsKazuhito Nishimura, Yoshiyuki Nasuno, Hiroshi Yamamoto, Yoshitaka Sugita
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Abstract
A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.
Claims18
A photoelectric conversion device comprising:
- a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer,
- wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms.
A photoelectric conversion device comprising:
- a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer,
- wherein the n-type semiconductor layer contains silicon atoms and nitrogen atoms.
Dependencies are inferred from the claim text.