Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer

A method for producing single crystal silicon by which the single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along an axial direction thereof, comprising:

• a step of preparing the seed crystal in which a <110> crystal orientation is inclined at a predetermined angle θ with respect to the axial direction;
• a dislocation network elimination step of gradually reducing a diameter of the single crystal silicon to dl after the seed crystal has been brought into contact with the melt;
• and
• a slip dislocation elimination step of further growing the single crystal silicon by a length of at least d1/tan θ, while maintaining the diameter thereof at almost d1.

A method for producing single crystal silicon wafer by which the single crystal silicon wafer is produced by dipping a seed crystal in a melt, growing the seed crystal into a single crystal silicon ingot by pulling it along an axial direction thereof, and slicing the single crystal silicon ingot, comprising:

• a step of preparing the seed crystal in which a <110> crystal orientation is inclined at a predetermined angle θ with respect to the axial direction;
• a dislocation network elimination step of gradually reducing a diameter of the single crystal silicon to d1 after the seed crystal has been brought into contact with the melt;
• a slip dislocation elimination step of further growing the single crystal silicon by a length of at least d1/tan θ, while maintaining the diameter thereof at almost d1;
• an ingot producing step of pulling the seed crystal to produce the single crystal silicon ingot;
• and
• a slicing step of slicing the single crystal silicon ingot in a direction perpendicular or almost perpendicular to the <110> crystal orientation to take out the single crystal silicon wafer.