Method of forming a gate structure

Abstract

A method of forming a gate structure is provided. A semiconductor substrate is provided first. A first insulator is formed on the semiconductor substrate. A plurality of dielectric layer structures are formed separate from each other. A portion of the first insulator is exposed. A second insulator is formed on the dielectric layer structure and the exposed first insulator. A portion of the second insulator and the first insulator are removed to form a plurality of spacer structures and to expose the semiconductor substrate. The spacer structures are positioned between the sidewalls of dielectric layer structure, and the exposed semiconductor substrate is positioned between the spacer structures. A third insulator is formed on the exposed semiconductor substrate. A semiconductor layer is formed on the third insulator, wherein the semiconductor layer is positioned between the spacer structures for a conductive gate. The bottom of the conductive gate is narrower than the top of conductive gate for use as a sub-100 nm transistor.

Dependencies are inferred from the claim text.