Process for producing oxide films
AssigneeASM International N.V.
InventorsMarko Vehkamaki, Timo Hatanpaa, Mikko Ritala, Markku Leskela
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Abstract
A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.
Claims33
A process for producing a bismuth-containing oxide thin film by Atomic Layer Deposition (ALD), wherein an organic bismuth compound having at least one silylamido ligand is used as a source material for the bismuth-containing oxide thin film.
The process according to claim 16, wherein one or more tris(bis(trialkylsilyl)amido)bismuth(III) compound is selected from the group consisting of tris(bis(trimethylsilyl)amido)bismuth(III), tris(bis(ethyldimethylsilyl)amido)bismuth(III), tris(bis(n-butyldimethylsilyl)amido)bismuth(III), and tris(bis(triethylsilyl)amido) bismuth(III) and tris(bis(tri-n-propylsilyl)amido)bismuth(III).
A process for depositing a bismuth oxide layer on a substrate by Atomic Layer Deposition (ALD) comprising:
- feeding into a reaction space a vapor phase pulse of an organic bismuth compound source material having at least one bis(trialkylsilyl)amido ligand;
- and
- pulsing into the reaction space a pulse of an oxygen source material capable of forming an oxide with the organic bismuth compound source material.
A process for forming a bismuth-containing multicomponent oxide thin film by Atomic Layer Deposition (ALD) on a substrate in a reaction space, comprising:
- alternately feeding into the reaction space vapor phase pulses of a first metal source material, a second metal source material, and an oxygen source material capable of forming an oxide with the first metal source material and the second metal source material, wherein
- said first metal source material is an organic bismuth compound having at least one bis(trialkylsilyl)amido ligand, and
- said second metal source material is a volatile compound of a transition metal or a volatile compound of a main group metal.
Dependencies are inferred from the claim text.