Stacked semiconductor laser diode

Arrangement of semiconductor diode lasers stacked on top of one another, having:

• a substrate on which a first diode laser is arranged;
• a second diode laser, which is arranged on the first diode laser;
• a contact layer which is arranged between the first diode laser and the second diode laser,
• characterized in that the contact layer comprises a first conductive layer of a first conduction type, a second conductive layer of a second conduction type, a first interlayer and a second interlayer, the first and second interlayers eing arranged between the first and second conductive layers and the first interlayer facing the first conductive layer and the second interlayer facing the second conductive layer.

Arrangement of semiconductor diode lasers stacked on top of one another, having:

• a substrate on which a first diode laser is arranged;
• a second diode laser, which is arranged on the first diode laser;
• a contact layer which is arranged between the first diode laser and the second diode laser,
• characterized in that the contact layer is formed in such a way that a lattice mismatch between the substrate and the first diode laser can be compensated for by a lattice mismatch of the opposite sign between the substrate and the contact layer.