Correction system, method of correcting deflection distortion, program and method for manufacturing a semiconductor device

A correction system comprising:

• an initial division unit configured to divide a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting;
• an initial aberration calculation unit configured to calculate an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected;
• a main division unit configured to divide the deflection area into main blocks in accordance with a change rate of the initial aberration amount;
• a main aberration calculation unit configured to calculate a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected;
• and
• a correction unit configured to calculate a correction value correcting a deflection distortion based on the main aberration amount.

A program for executing an application on a correction system, the program comprising:

• instructions for dividing a deflection area to which a charged-particle beam is deflected into initial blocks as an initial setting;
• instructions for calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected;
• instructions for dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount;
• instructions for calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected;
• and
• instructions for calculating a correction value correcting a deflection distortion based on the main aberration amount.

A method for manufacturing a semiconductor device comprising:

• generating layout data of a device pattern for each layer of the semiconductor device corresponding to stages in a manufacturing process;
• preparing a set of masks for each layers of the semiconductor device, each of masks dividing a deflection area to which a charged-particle beam is deflected into initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount, calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, calculating a correction value correcting a deflection distortion based on the main aberration amount, and delineating masks corresponding to the stages, respectively, by deflecting the charged-particle beam using the correction value based on the layout data in a charged-particle beam drawing tool;
• coating a resist film on a semiconductor wafer;
• delineating an etching mask by exposing a device pattern of one of a mask in the set of masks to the resist film;
• and
• processing the semiconductor wafer using the etching mask.