Embedded non-volatile memory and a method for fabricating the same

Abstract

A low density and cost effective embedded non-volatile memory cell includes a semiconductor substrate of a first conductivity type and having device isolation regions and active regions defined therein; a first well of a second conductivity type in the semiconductor substrate; a plurality of second wells of the first conductivity type inside the first well, the second wells being formed in parallel with a bit line and surrounded by the device isolation regions and the first well; a plurality of ONO structures formed over corresponding ones of the second wells, each ONO structure including a first oxide film, a nitride film, and a second oxide film; and a plurality of gates formed on corresponding ones of the ONO structures and formed in parallel with a word line.

Dependencies are inferred from the claim text.