Method for fabricating a silicon nanocrystal, silicon nanocrystal, method for fabricating a floating gate type memory capacitor structure, and floating gate type memory capacitor structure

A method for fabricating a floating gate type memory capacitor structure, comprising the steps of:

• forming a silicon oxide layer at a surface region of a silicon substrate,
• forming an amorphous silicon layer on said silicon substrate via said silicon oxide layer,
• supplying a raw material gas onto said amorphous silicon layer to form a silicon nanocrystal,
• oxidizing a surface region of said silicon nanocrystal,
• forming an additional amorphous silicon layer so as to embed said silicon nanocrystal,
• thermally oxidizing said additional amorphous silicon layer to form an additional silicon oxide layer, and
• forming an electrode on said additional silicon oxide layer.