High-k dielectric stack in a mim capacitor and method for its fabrication

A method for fabricating a MIM capacitor in a semiconductor die, said method comprising steps of:

• forming a lower electrode of said MIM capacitor;
• forming a first high-k dielectric layer over said lower electrode, said first high-k dielectric layer having a first dielectric constant;
• forming an intermediate dielectric layer on said first high-k dielectric layer, said intermediate dielectric layer having a second dielectric constant;
• forming a second high-k dielectric layer on said intermediate layer said second high-k dielectric layer having a third dielectric constant;
• forming an upper electrode of said MIM capacitor over said second high-k dielectric layer;
• wherein said second dielectric constant is nor greater than said first dielectric constant and said third dielectric constant;
• wherein said intermediate dielectric layer forms an interface with each of said first high-k dielectric layer and said second high-k dielectric layer to impede electron flow between said upper and lower electrodes of said MIM capacitor.

A MIM capacitor situated in a semiconductor die, said MIM capacitor comprising:

• a lower electrode;
• a first cladding layer situated on said lower electrode:
• a first high-k dielectric layer situated on said first cladding layer said first high-k dielectric layer having a first dielectric constant;
• an intermediate dielectric layer situated on said first high-k dielectric layer said intermediate dielectric layer having a second dielectric constant;
• a second high-k dielectric layer situated on said intermediate dielectric layer, said second high-k dielectric layer having a third dielectric constant;
• a second cladding layer situated on said second high-k dielectric layer;
• an upper electrode situated on said second cladding layer;
• wherein said intermediate dielectric layer forms an interface with each of said first high-k dielectric layer and said second high-k dielectric layer to impede electron flow between said upper and lower electrodes of said MIM capacitor.