Dual capacitor structure for imagers and method of formation

A method of forming an imaging device having both single dielectric capacitors and dual dielectric capacitors, the method comprising the steps of:

• forming at least one photosensor;
• forming a first electrode layer over said substrate in a pixel region and a periphery region;
• forming a first dielectric layer over said first electrode layer;
• forming a second dielectric layer over said first dielectric layer;
• removing said second dielectric layer in one of said pixel region and said periphery region;
• and
• patterning a second electrode layer in said pixel region and said periphery region, such that one of said pixel region and said periphery region comprises said first dielectric layer, and the other of said pixel region and said periphery region comprises both said first dielectric layer and said second dielectric layer.

An imaging device, comprising:

• a semiconductor substrate;
• at least one photosensor;
• a first electrode layer over said substrate in a pixel region and a periphery region of said imaging device;
• a first dielectric layer over said first electrode layer;
• a second dielectric layer over said first dielectric layer;
• and
• a second electrode layer over said second dielectric layer.

An imaging device, comprising:

• a substrate;
• at least one photosensor;
• at least one in-pixel capacitor formed in the pixel array region of said substrate, said at least one in-pixel capacitor comprising a first electrode, a first plurality of dielectric layers and a second electrode;
• and
• at least one peripheral capacitor formed in a peripheral region of said substrate, said peripheral region being adjacent said pixel array region, said at least one peripheral capacitor comprising said first electrode, a second plurality of dielectric layers, and said second electrode.

A CMOS imager system, comprising:

• (i) a processor;
• and
• (ii) a CMOS imaging device coupled to said processor, said CMOS imaging device comprising:
• a semiconductor substrate;
• at least one photosensor;
• a first electrode layer over said substrate in a pixel region and a periphery region of said imaging device;
• a first dielectric layer over said first electrode layer;
• a second dielectric layer over said first dielectric layer;
• and
• a second electrode layer over said second dielectric layer.

A CCD imaging device, comprising:

• a semiconductor substrate;
• at least one photosensor;
• a first electrode layer over said substrate in a pixel region and a periphery region of said imaging device;
• a first dielectric layer over said first electrode layer;
• a second dielectric layer over said first dielectric layer;
• and
• a second electrode layer over said second dielectric layer.

A CCD imager system, comprising:

• (i) a processor;
• and
• (ii) a CCD imaging device coupled to said processor, said CCD imaging device comprising:
• a semiconductor substrate;
• at least one photosensor;
• a first electrode layer over said substrate in a pixel region and a periphery region of said imaging device;
• a first dielectric layer over said first electrode layer;
• a second dielectric layer over said first dielectric layer;
• and
• a second electrode layer over said second dielectric layer,
• wherein at least one of said first dielectric layer and second dielectric layer differs between said pixel region and said periphery region to form different in-pixel capacitors and periphery capacitors.

An imaging device, comprising:

• a substrate;
• at least one photosensor;
• a first type capacitor in the array and in the periphery, wherein the first type capacitor in the array is the same as the first type capacitor in the periphery, and wherein the first type capacitor comprises a first electrode, a first plurality of dielectric layers and a second electrode;
• and
• a second type capacitor in the array, wherein the second type capacitor comprises said first electrode, a second plurality of dielectric layers, and said second electrode.

An imaging device, comprising:

• a substrate;
• at least one photosensor;
• a first type capacitor in the array and in the periphery, wherein the first type capacitor in the array is the same as the first type capacitor in the periphery, and wherein the first type capacitor comprises a first electrode, a first plurality of dielectric layers and a second electrode;
• and
• a second type capacitor in the array and in the periphery, wherein the second type capacitor in the array is the same as the second type capacitor in the periphery, and wherein the second type capacitor comprises said first electrode, a second plurality of dielectric layers, and said second electrode.

An imaging device, comprising:

• a substrate;
• at least one photosensor;
• a first type capacitor in the array and in the periphery, wherein the first type capacitor in the array is the same as the first type capacitor in the periphery, and wherein the first type capacitor comprises a first electrode, a first plurality of dielectric layers and a second electrode;
• and
• a second type capacitor in the periphery, wherein the second type capacitor comprises said first electrode, a second plurality of dielectric layers, and said second electrode.

A CCD imager system, comprising:

• (i) a processor;
• and
• (ii) a CCD imaging device coupled to said processor, said CCD imaging device comprising:
• a semiconductor substrate;
• at least one photosensor;
• a first type capacitor in the array and in the periphery, wherein the first type capacitor in the array is the same as the first type capacitor in the periphery, and wherein the first type capacitor comprises a first electrode, a first plurality of dielectric layers and a second electrode;
• and
• a second type capacitor in the periphery, wherein the second type capacitor comprises said first electrode, a second plurality of dielectric layers, and said second electrode.