Recess gate transistor structure for use in semiconductor device and method thereof

A transistor of recess gate transistor formed on a substrate having a device isolation film that defines an active region and a non-active region, the active region being sub-defined by a recess as a first active region and a second active region, the transistor comprising:

• a gate insulation layer formed within the recess;
• a gate electrode, which is extended from within the recess, and an upper length of which is formed smaller than a lower length thereof, by a predetermined distance spaced from the gate insulation layer in contact with the first active region;
• a first gate spacer formed on a side face of the gate electrode in contact with the gate insulation layer on the first active region;
• a second gate spacer formed on other side face of the gate electrode in contact with the second active region;
• and
• a source region and a drain region formed mutually oppositely on the first and second active regions with the gate electrode therebetween.

A method of forming a recess gate transistor on a substrate having a device isolation film that defines an active region and a non-active region, the method comprising:

• separating a first active region from a second active region in a portion of the active region by using a recess;
• placing a gate insulation layer within the recess;
• forming a gate electrode, which is extended from within the recess in which the gate insulation layer was placed, and which has a flute with a predetermined horizontal thickness measured from a portion of the gate insulation layer in contact with the first active region and that has a predetermined depth from an upper surface of the first active region;
• forming a first gate spacer on a sidewall of the gate electrode in contact with the gate insulation layer on the first active region, so as to fill the flute;
• forming a second gate spacer on a sidewall of the gate electrode in contact with the gate insulation layer on the second active region;
• and
• forming a source region and a drain region formed mutually oppositely on the first and second active regions with the gate electrode therebetween.