System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
AssigneeLam Research Corporation
InventorsAndrew Bailey, Shrikant Lohokare
Life of this patent
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Abstract
A system and method of passivating an exposed conductive material includes placing a substrate in a process chamber and injecting a hydrogen species into the process chamber. A hydrogen species plasma is formed in the process chamber. A surface layer species is reduced from a top surface of the substrate is reduced. The reduced surface layer species are purged from the process chamber.
Claims23
A method of passivating an exposed conductive material comprising:
- placing a substrate in a process chamber;
- injecting a hydrogen species into the process chamber;
- forming a hydrogen species plasma in the process chamber;
- reducing a surface layer species from a top surface of the substrate;
- and
- purging the reduced surface layer species from the process chamber.
A method of passivating an exposed copper interconnect comprising:
- placing a substrate in a process chamber;
- injecting a hydrogen species into the process chamber;
- forming a hydrogen species plasma in the process chamber;
- reducing a copper oxide from a top surface of the exposed copper interconnect;
- and
- purging the reduced copper oxide from the process chamber.
A method of performing a non-contact planarization on a substrate comprising:
- placing a substrate in an etch process chamber;
- etching the substrate;
- injecting a hydrogen species into the etch process chamber;
- forming a hydrogen species plasma in the etch process chamber;
- reducing a surface layer species from a top surface of the substrate;
- and
- purging the reduced surface layer species from the process chamber.
Dependencies are inferred from the claim text.