GaN-based III - V group compound semiconductor device and p-type electrode for the same

A III-V group GaN-based compound semiconductor device comprising:

• a GaN-based compound semiconductor layer formed by stacking a plurality of layers and including an active layer for emission;
• a p-type semiconductor layer disposed on the GaN-based compound semiconductor layer;
• and
• a p-type electrode layer disposed on the p-type semiconductor layer, wherein the p-type electrode layer comprises:
• a first layer disposed on the p-type semiconductor layer and formed of a Zn-based material containing a solute;
• and
• a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, ZITO, ZIO, GIO, ZTO, FTO, AZO, GZO, In4Sn3O12, and Zn1-xMgxO (0≦x≦1).