Inverted nitride-based semiconductor structure
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Remigijus Gaska
Life of this patent
Estimating the term…
Abstract
A nitride-based semiconductor structure is provided. The structure includes an active layer that comprises an inverted quantum well structure that includes Indium and Nitrogen. The structure can be used to create a field effect transistor. In this case, the active layer forms an inverted active device channel. By including Indium and forming the inverted active device channel, a device having improved performance characteristics can be manufactured. Further, additional improvements, such as one or more additional layers, a second gate contact, and/or one or more field plates can be included in the device to obtain the desired performance characteristics.
Claims22
A nitride-based semiconductor structure comprising:
- a substrate;
- an active layer above the substrate, wherein the active layer comprises an inverted quantum well structure that includes Indium and Nitrogen.
A nitride-based semiconductor structure comprising:
- a substrate;
- a first layer above the substrate, wherein the first layer comprises Nitrogen and at least one group III element;
- an active layer on the first layer, wherein the active layer comprises an inverted quantum well structure that includes Indium and Nitrogen;
- and
- a first contact above the active layer.
A nitride-based field effect transistor comprising:
- a substrate;
- an active layer above the substrate, wherein the active layer comprises an inverted active device channel, and wherein the active layer comprises Indium and Nitrogen;
- a gate contact above the active layer;
- a source contact above the substrate and adjacent to the active layer;
- and
- a drain contact above the substrate and adjacent to the active layer.
Dependencies are inferred from the claim text.