Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure

A semiconductor device comprising:

• a superlattice comprising a plurality of stacked groups of layers;
• each group of layers of said superlattice comprising a plurality of stacked base germanium monolayers defining a base germanium portion and an energy band-modifying layer thereon;
• said groups of layers arranged in an alternating pattern of first and second groups of layers, with each first group of layers comprising three base germanium monolayers, and each second group of layers comprising five base germanium monolayers;
• said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base germanium portions.

A semiconductor device comprising:

• a substrate;
• and
• a superlattice comprising a plurality of stacked groups of layers adjacent said substrate;
• each group of layers of said superlattice comprising a plurality of stacked base germanium monolayers defining a base germanium portion and an energy band-modifying layer thereon;
• said groups of layers arranged in an alternating pattern of first and second groups of layers, with each first group of layers comprising three base germanium monolayers, and each second group of layers comprising five base germanium monolayers;
• said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base germanium portions, said superlattice thereby having a higher charge carrier mobility in at least one direction than would otherwise be present.