Semiconductor light emitting apparatus and method of fabricating the same

A method of fabricating a semiconductor light emitting apparatus characterized by comprising the steps of:

• epitaxially growing, on a substrate, at least a first-conductivity-type first cladding layer, an active layer and a second-conductivity-type second cladding layer, composing a semiconductor light emitting element;
• forming, on said second cladding layer side, a pair of opposing first recesses forming therebetween a stripe-patterned ridge which configures a major current path;
• forming a second recess on the outer side of at least one of said first recesses, either after or before said step of forming said pair of opposing first recesses;
• epitaxially growing a first-conductivity-type current blocking layer and a second-conductivity-type contact layer so as to extend over said first and second recesses;
• forming a recess to a depth across said contact layer and current blocking layer above the ridge to thereby form a thinned portion;
• and
• introducing a second-conductivity-type impurity from the side above said contact layer to thereby form, in said thinned portion, a contact portion reaching said second cladding layer of the ridge,
• wherein a light emitting portion causing light emission by current which flows through said major current path;
• and a thyristor structural portion composed of a stack of said second-conductivity-type contact layer, said first-conductivity-type current blocking layer, said second-conductivity-type cladding layer, said active layer and said first-conductivity-type first cladding layer at said second recess are formed;
• and ON voltage of said thyristor structural portion is adjustable depending on selection of depth of said second recess.