Pyroelectric device, method for manufacturing same and infrared sensor

A method for manufacturing a pyroelectric device, comprising:

• a first step of forming a first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof on a substrate;
• a second step of forming, on the first electrode layer, a pyroelectric layer having a thickness of 0.5 μm to 5 μm and including a pyroelectric material having a perovskite crystalline structure whose composition is represented as:
• (Pb(1-y)Lay)Ti(1-y/4)O3
• (where 0<y≦0.2)
• or
• (Pb(1-y)Lay)(ZrxTi(1-x))(1-y/4)O3
• (where 0<x≦0.2 or 0.55≦x<0.8 and 0<y≦0.2);
• and
• a third step of forming a second electrode layer on the pyroelectric layer.

An infrared radiation sensor, comprising:

• a pyroelectric device;
• and
• an output terminal for outputting an electric signal from the pyroelectric device, wherein:
• the pyroelectric device includes a first electrode layer, a pyroelectric layer provided on the first electrode layer, and a second electrode layer provided on the pyroelectric layer;
• the first electrode layer includes a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof;
• and
• the pyroelectric layer has a thickness of 0.5 μm to 5 μm and includes a pyroelectric material having a perovskite crystalline structure whose composition is represented as:
• (Pb(1-y)Lay)Ti(1-y/4)O3
• (where 0<y≦0.2)
• or
• (Pb(1-y)Lay)(ZrxTi(1-x))(1-y/4)O3
• (where 0<x≦0.2 or 0.55≦x<0.8 and 0<y≦0.2).