Apparatus for processing substrate and method of doing the same
AssigneeNEC LCD Technologies, Ltd.
InventorShusaku Kido
Life of this patent
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Abstract
The apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a gas-applying unit for applying gas atmosphere to the substrate.
Claims134
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a chemical-applying unit for applying chemical to said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein said gas-applying unit includes a temperature controller which keeps said substrate at 15 to 40 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate, wherein said gas-applying unit includes a temperature controller which keeps said substrate at 10 to 50 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein said gas-applying unit includes a temperature controller which keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein said temperature-control unit keeps said substrate at 15 to 40 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein said temperature-control unit keeps said substrate at 10 to 50 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein said temperature-control unit keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at 10 to 50 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at 10 to 50 degrees centigrade both inclusive, and
- temperature controllers of said temperature-control unit and said gas-applying unit have target temperatures at which said substrate is kept, said target temperatures being identical with each other or being within ±5 degrees to each other.
An apparatus for processing a substrate, comprising:
- a substrate carrier for carrying a substrate;
- a temperature-control unit for controlling a temperature of said substrate;
- and
- a gas-applying unit for applying gas atmosphere to said substrate,
- wherein each of said temperature-control unit and said gas-applying unit includes a temperature controller which keeps said substrate at a target temperature within ±2 degrees, said target temperature being in the range of 10 to 50 degrees centigrade both inclusive, and temperature controllers of said temperature-control unit and said gas-applying unit have target temperatures at which said substrate is kept, said target temperatures being identical with each other or being within ±5 degrees to each other.
Dependencies are inferred from the claim text.