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US 2005/0087264 A1Published application
Optical sensor
AssigneeNational Institute of Advanced Industrial Science and Technology and Kankyo Semi-Conductors
InventorsHisao Tanoue, Yunosuke Makita, Zhengxin Liu, Yasuhiko Nakayama
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Abstract
An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.
Claims15
An optical sensor comprising:
- a silicon (Si) substrate;
- and
- a beta-iron disilicide (β-FeSi2) film formed on the substrate.
An optical sensor comprising:
- a silicon (Si) substrate;
- a beta-iron disilicide (β-FeSi2) film formed on the substrate;
- and
- a silicon (Si) film formed on the beta-iron disilicide film.
1 more element
An optical sensor comprising:
- a silicon substrate;
- a first beta-iron disilicide (β-FeSi2) film formed on the substrate;
- and
- a second beta-iron disilicide (β-FeSi2) film formed on the first beta-iron disilicide (β-FeSi2) film,
- wherein an n-type/p-type junction interface or a p-type/n-type junction interface is formed between the substrate and the first beta-iron disilicide (β-FeSi2) film and between the substrate and the second beta-iron disilicide (β-FeSi2) film, respectively.
2 more elements
Dependencies are inferred from the claim text.