Method of manufacturing capacitive type dynamic quantity sensor
AssigneeDenso Corporation
InventorMinekazu Sakai
Life of this patent
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Abstract
In a capacitive type dynamic quantity sensor, a width of a beam in a beam portion extending in a direction that is perpendicular to a predetermined deformation direction and a gap disposed between a movable electrode and the fixed electrode in the predetermined deformation direction are approximately identical. Accordingly, manufacturing error is prevented from affecting the sensitivity of the capacitive type dynamic quantity sensor. For example, a manufacturing tolerance error of ±2.5% is allowed as a result of designing the width of the beam and the gap to be identical in length.
Claims14
1-5. (canceled)
A method of manufacturing a capacitive type dynamic quantity sensor, wherein the capacitive type dynamic quantity sensor has a beam portion with a beam for deforming in a predetermined deformation direction based on physical force application, a movable electrode formed integrally with the beam portion to move therewith and extending in a direction perpendicular to the predetermined deformation direction, and a fixed electrode facing and being separated from the movable electrode, comprising:
- forming a trench in a substrate to form the beam portion, the movable electrode and the fixed electrode simultaneously, wherein the forming of the trench forms the beam so as to have a width extending in the direction perpendicular to the predetermined deformation direction, and forms a gap disposed between the movable electrode and the fixed electrode, the gap having a width in the predetermined deformation direction that is approximately identical to the beam width.
A method of manufacturing a capacitive type dynamic quantity sensor comprising:
- forming a trench in a substrate to form a beam portion, a movable electrode and a fixed electrode simultaneously, wherein the forming of the trench forms the beam portion so as to have a width extending in a direction perpendicular to a predetermined deformation direction, and forms a gap disposed between the movable electrode and the fixed electrode, the gap having a width in the predetermined deformation direction that is approximately identical to the width of the beam portion.
A method of manufacturing a capacitive type dynamic quantity sensor, the method comprising
- forming a trench in a semiconductor substrate having an opening portion to simultaneously form fixed electrode groups, which are positioned on respective opposing peripheral sides of the opening portion and extend over the opening portion, and a movable portion across the opening portion, wherein:
- the movable portion is formed to include a rectangular plumb portion, beam portions, movable electrode groups extending from the plumb portion and being in parallel with and opposing the fixed electrode groups to define respective gaps therebetween, and anchor portions supporting the plumb portion at respective ends of the plumb portion;
- the movable electrode groups are formed to be movable in a deformation direction of the beam portion above the opening portion upon application of a dynamic force to the beam portions;
- and
- the fixed electrode groups, the beam portions and the gaps are formed to have approximately identical widths.
Dependencies are inferred from the claim text.