Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device, which comprises a transistor formed on a semiconductor substrate and a capacitance element disposed on said transistor, said capacitance element being coupled to said transistor, comprising:

• forming a transistor on a semiconductor substrate;
• forming a first interlayer insulating film to cover said transistor;
• forming a plurality of first electroconducting plugs within said first interlayer insulating film, said first electroconducting plug being coupled to said transistor;
• forming a bit line on said first interlayer insulating film, said bit line being coupled to said first electroconducting plug;
• forming a nitride film to cover a side surface and an upper surface of said bit line;
• forming a second interlayer insulating film to cover said nitride film;
• forming a second electroconducting plug within said second interlayer insulating film and said nitride film, said second electroconducting plug being couled to said first electroconducting plug, which is not coupled to said bit line;
• and
• forming a capacitance element on said second interlayer insulating film, said capacitance element being coupled to said second electroconducting plug.

A method for manufacturing a semiconductor device, which comprises a transistor formed on a semiconductor substrate and a capacitance element disposed on said transistor, said capacitance element being coupled to said transistor, comprising:

• forming a transistor on a semiconductor substrate;
• forming a first interlayer insulating film to cover said transistor;
• forming a first electroconducting plug within said first interlayer insulating film, said first electroconducting plug being coupled to said transistor;
• forming a second interlayer insulating film on said first interlayer insulating film to cover said first electroconducting plug;
• forming a second electroconducting plug within said second interlayer insulating film, said second electroconducting plug being coupled to said first electroconducting plug;
• forming a barrier metal film on said second interlayer insulating film, said barrier metal film being coupled to said second electroconducting plug;
• forming a bit line on said barrier metal film;
• selectively etching said barrier metal film to form an inversely-tapered shape;
• forming a third interlayer insulating film on said second interlayer insulating film to cover said bit line;
• forming a third electroconducting plug within said third interlayer insulating film and said second interlayer insulating film, said third electroconducting plug being coupled to a first electroconducting plug, which is not coupled to said second electroconducting plug;
• and
• forming a capacitance element on said third interlayer insulating film, said capacitance element being coupled to said third electroconducting plug.

A method for manufacturing a semiconductor device, which comprises a transistor formed on a semiconductor substrate and a capacitance element disposed on said transistor, said capacitance element being coupled to said transistor, comprising:

• forming a transistor on a semiconductor substrate;
• forming a first interlayer insulating film to cover said transistor;
• forming a first electroconducting plug within said first interlayer insulating film, said first electroconducting plug being coupled to said transistor;
• forming a barrier metal film on said second interlayer insulating film, said barrier metal film being coupled to said second electroconducting plug;
• forming a bit line on said barrier metal film;
• selectively etching said barrier metal film to form an inversely-tapered shape;
• forming a second interlayer insulating film on said first interlayer insulating film to cover said bit line;
• forming a second electroconducting plug within said second interlayer insulating film, said second electroconducting plug being coupled to said first electroconducting plug, which is not coupled to said barrier metal film;
• and
• forming a capacitance element on said second interlayer insulating film, said capacitance element being coupled to said second electroconducting plug.

A semiconductor device, which comprises a transistor formed on a semiconductor substrate and a capacitance element disposed on said transistor, said capacitance element being coupled to said transistor, comprising:

• a semiconductor substrate;
• a transistor provided on said semiconductor substrate;
• a first interlayer insulating film, being provided on said semiconductor substrate, and covering said transistor;
• a first electroconducting plug, being provided within said first interlayer insulating film, and being coupled to said transistor, a second interlayer insulating film, being provided in a region on said first interlayer insulating film, said region excluding a portion being directly above said first electroconducting plug;
• a second electroconducting plug, being provided within said second interlayer insulating film, and being coupled to said first electroconducting plug;
• a bit line, being provided on said second interlayer insulating film, and being coupled to said second electroconducting plug;
• a nitride film covering a side surface and an upper surface of said bit line at substantially constant film thickness;
• a capacitance contact interlayer film covering said nitride film;
• a third electroconducting plug provided within said capacitance contact interlayer film and said nitride film, and being coupled to said first electroconducting plug, which is not coupled to said second electroconducting plug;
• and
• a capacitance element, being provided on said third interlayer insulating film, and being coupled to said third electroconducting plug.

A semiconductor device, which comprises a transistor formed on a semiconductor substrate and a capacitance element disposed on said transistor, said capacitance element being coupled to said transistor, comprising:

• a semiconductor substrate;
• a transistor being provided on said semiconductor substrate;
• a first interlayer insulating film, being provided on said semiconductor substrate, and covering said transistor;
• a first electroconducting plug, being provided within said first interlayer insulating film, and being coupled to said transistor;
• a bit line, being provided on said first interlayer insulating film, and being coupled to said first electroconducting plug;
• a nitride film covering a side surface and an upper surface of said bit line at substantially constant film thickness;
• a second interlayer insulating film covering said nitride film;
• a second electroconducting plug, being provided within said second interlayer insulating film and said nitride film, and being coupled to a first electroconducting plug, which is not coupled to said bit line;
• and
• a capacitance element, being provided on said second interlayer insulating film, and being coupled to said second electroconducting plug.

A semiconductor device, which comprises a transistor formed on a semiconductor substrate and a capacitance element disposed on said transistor, said capacitance element being coupled to said transistor, comprising:

• a semiconductor substrate;
• a transistor, being provided on said semiconductor substrate;
• a first interlayer insulating film, being provided on the said semiconductor substrate, and covering said transistor;
• a first electroconducting plug, being provided within said first interlayer insulating film, and being coupled to said transistor;
• a second interlayer insulating film, being provided in a region on said first interlayer insulating film, said region excluding a portion being directly above said first electroconducting plug;
• a second electroconducting plug, being provided within said second interlayer insulating films, and being coupled to said first electroconducting plug;
• a barrier metal film, being provided on said second interlayer insulating film, being coupled to said second electroconducting plug, and having an inversely-tapered shape;
• a bit line being provided on said barrier metal film;
• a third interlayer insulating film covering said bit line;
• a third electroconducting plug, being provided within said third interlayer insulating film, and being coupled to said second electroconducting plug, which is not coupled to said barrier metal film;
• and
• a capacitance element, being provided on said third interlayer insulating film, and being coupled to said third electroconducting plug.

A semiconductor device, which comprises a transistor formed on a semiconductor substrate and a capacitance element disposed on said transistor, said capacitance element being coupled to said transistor, comprising:

• a semiconductor substrate;
• a transistor being provided on said semiconductor substrate top;
• a first interlayer insulating film, being provided on said semiconductor substrate, and covering said transistor;
• a first electroconducting plug, being provided within said first interlayer insulating films, and being coupled to said transistor;
• a barrier metal film, being provided on said first interlayer insulating film, being coupled to said first electroconducting plug, and having an inversely-tapered shape;
• a bit line, being provided on said barrier metal film;
• a second interlayer insulating film covering said bit line;
• a second electroconducting plug, being provided within said second interlayer insulating films, and being coupled to said first electroconducting plug, which is not coupled to said barrier metal;
• and
• a capacitance element, being provided on said second interlayer insulating film, and being coupled to said second electroconducting plug.