Method for forming inductor in semiconductor device

Abstract

The present invention relates to a method for manufacturing an inductor being a passive device in RE MEMS, RFCMOS, Bipolor/SiGe and BiCMOS semiconductor devices. According to the present invention, a first negative photoresist layer is covered on a substrate having a lower electrode. A via hole that will become a contact portion of the inductor is then defined by means of an exposure process using a first mask. A second negative photoresist layer is covered on the first negative photoresist layer. Trenches that will become line portions of the inductor are defined by an exposure process using a second mask. A damascene pattern having the via hole and the trenches is formed by means of a developing process and is then buried with copper, thus forming the inductor. Not only a thickness of the trenches in the line portion and a thickness of the via hole in the contact portion can be uniformly controlled, but also their height can be easily controlled. Therefore, that an inductor of a high quality can be manufactured.

Dependencies are inferred from the claim text.