Semiconductor capacitor structure and method to form same

A method to form a capacitor structure for a semiconductor device comprising the steps of:

• forming a metal material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;
• forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material to form a first capacitor plate comprising said metal silicide and said metal nitride material;
• forming a capacitor dielectric overlying said metal nitride material;
• and
• forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.

A method to form a capacitor plate structure for a semiconductor device comprising the steps of:

• forming a titanium material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;
• forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material.

A method to form a capacitor structure for a semiconductor device comprising the steps of:

• forming a titanium material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;
• forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material to form a first capacitor plate comprising said titanium silicide and said titanium nitride material;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.

A method to form a capacitor structure for a semiconductor device comprising the steps of:

• forming a nickel material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said nickel material and said conductive hemispherical grained polysilicon at the bottom of the container structure to nickel silicide;
• forming a titanium nitride material overlying said conductive hemispherical grained material and said nickel silicide material to form a first capacitor plate comprising said nickel silicide and said titanium nitride material;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.

A method of forming a capacitor structure during semiconductor fabrication comprising the steps of:

• forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;
• forming a titanium layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;
• forming conductive hemispherical grained polysilicon material on said titanium layer;
• converting said hemispherical polysilicon material and said titanium layer at said base region to a titanium silicide material;
• forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said titanium silicide material to form a first capacitor plate;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.

A method of forming a capacitor structure during semiconductor fabrication comprising the steps of:

• forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;
• forming a nickel layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;
• forming conductive hemispherical grained polysilicon material on said nickel layer;
• converting said hemispherical polysilicon material and said nickel layer at said base region to a nickel silicide material;
• forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said nickel silicide material to form a first capacitor plate;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.

A method to form a semiconductor device having a capacitor plate structure comprising the steps of:

• forming a metal material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;
• forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material.

A method to form a semiconductor device having a capacitor structure comprising the steps of:

• forming a metal material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;
• forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material to form a first capacitor plate comprising said metal silicide and said metal nitride material;
• forming a capacitor dielectric overlying said metal nitride material;
• and
• forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.

A method to form a semiconductor device having a capacitor plate structure comprising the steps of:

• forming a titanium material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;
• forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material.

A method to form a semiconductor device having a capacitor structure comprising the steps of:

• forming a titanium material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said titanium material and said conductive hemispherical grained polysilicon at the bottom of the container structure to titanium silicide;
• forming a titanium nitride material overlying said conductive hemispherical grained material and said titanium silicide material to form a first capacitor plate comprising said titanium silicide and said titanium nitride material;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.

A method to form a semiconductor device having a capacitor structure comprising the steps of:

• forming a nickel material on the base of an opening in an insulative material;
• forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
• converting said nickel material and said conductive hemispherical grained polysilicon at the bottom of the container structure to nickel silicide;
• forming a titanium nitride material overlying said conductive hemispherical grained material and said nickel silicide material to form a first capacitor plate comprising said nickel silicide and said titanium nitride material;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.

A method of forming a semiconductor device having a capacitor structure comprising the steps of:

• forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;
• forming a titanium layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;
• forming conductive hemispherical grained polysilicon material on said titanium layer;
• converting said hemispherical polysilicon material and said titanium layer at said base region to a titanium silicide material;
• forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said titanium silicide material to form a first capacitor plate;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.

A method of forming a semiconductor device having a capacitor structure comprising the steps of:

• forming a recessed region into an insulative material, said recessed region having sidewalls and a base, said base providing access to an underlying conductive plug connected to a source/drain region of a transistor;
• forming a nickel layer on said sidewalls said and on a base region of said insulative material in contact with said underlying conductive plug;
• forming conductive hemispherical grained polysilicon material on said nickel layer;
• converting said hemispherical polysilicon material and said nickel layer at said base region to a nickel silicide material;
• forming a titanium nitride material overlying said conductive hemispherical grained polysilicon material and said nickel silicide material to form a first capacitor plate;
• forming a capacitor dielectric overlying said titanium nitride material;
• and
• forming a conductive polysilicon material overlying said capacitor dielectric to form a second capacitor plate.