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US 2005/0037559 A1Published application
Method of manufacturing a semiconductor device
AssigneeSeiko Instruments Inc.
InventorJun Osanai
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Abstract
There is provided a method of manufacturing a high quality P-channel trench MOSFET which stably operates. In the method of manufacturing a P-channel trench MOSFET having a P-type gate electrode, the process in which BF2 ions are implanted into a polycrystalline silicon film and thereafter the heat treatment is carried out is performed plural times to thereby form the gate electrode, and it is possible to provide the P-channel trench MOSFET of high quality which stably operates.
Claims4
A method of manufacturing a P-channel MOSFET, comprising:
- forming a trench within an N-type semiconductor substrate;
- forming a gate oxide film on an inner surface of the trench;
- depositing a first polycrystalline silicon film on the semiconductor substrate;
- implanting BF2 ions into the first polycrystalline silicon film by utilizing an ion implantation method and carrying out a first heat treatment;
- depositing a second polycrystalline silicon film on the first polycrystalline silicon film;
- implanting BF2 ions into the second polycrystalline silicon film by utilizing the ion implantation method and carrying out a second heat treatment;
- depositing a third polycrystalline silicon on the second polycrystalline silicon film;
- and
- implanting BF2 ions into the third polycrystalline silicon film by utilizing the ion implantation method and carrying out a third heat treatment.
6 more elements
Dependencies are inferred from the claim text.