Method for fabricating transistor having fully silicided gate
AssigneeUnited Microelectronics Corp.
InventorsYoyi Gong, Tony Lin, Jung-Tsung Tseng, Abula Yu
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Abstract
A method for fabricating a transistor having a fully silicided gate is described. A silicon substrate with a semi-finished transistor formed thereon is provided, wherein the transistor comprises a gate dielectric film, a silicon gate, a cap layer on the silicon gate, a spacer and a source/drain region. A raised source/drain is formed on the source/drain region, and then the cap layer is removed. Subsequently, a full silicidation process is performed to fully silicide the silicon gate.
Claims20
A method for fabricating a transistor having a fully silicided gate, comprising:
- providing a substrate with a semi-finished transistor formed thereon, wherein the semi-finished transistor comprises a gate dielectric film, a silicon gate on the gate dielectric film, a cap layer on the silicon gate, a spacer on sidewalls of the silicon gate and a source/drain region in the substrate beside the silicon gate;
- forming a raised source/drain on the source/drain region;
- removing the cap layer;
- and
- performing a full silicidation process to fully silicide the silicon gate.
A method for fabricating a transistor having a fully silicided gate, comprising:
- sequentially forming a gate dielectric film, a silicon layer and an anti-reflection layer on a silicon substrate;
- patterning the anti-reflection layer, the silicon layer and the gate dielectric film to form a gate structure, wherein the silicon layer is patterned into a silicon gate;
- forming a source/drain extension in the substrate beside the gate structure;
- forming a spacer on sidewalls of the gate structure;
- forming a source/drain region in the substrate beside the spacer;
- performing a selective epitaxial growth (SEG) process to form a raised source/drain on the source/drain region;
- removing the anti-reflection layer;
- and
- performing a full silicidation process to fully silicide the silicon gate and simultaneously to form a silicide contact from the raised source/drain.
Dependencies are inferred from the claim text.