Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming a non-single crystalline semiconductor film on a substrate having an insulating surface;
• providing defects and/or stress in a selected region of the semiconductor film;
• disposing a crystallization promoting material in contact with the semiconductor film, the crystallization promoting material containing a metal;
• crystallizing the semiconductor film provided with the crystallization promoting material by heating wherein the metal segregates in the selected region during the crystallization;
• and
• etching the selected region after the crystallizing.

A method for manufacturing a semiconductor device comprising:

• forming a non-single crystalline semiconductor film on a substrate having an insulating surface;
• providing defects and/or stress in a selected region of the semiconductor film;
• disposing a crystallization promoting material in contact with the semiconductor film, the crystallization promoting material containing a metal;
• crystallizing the semiconductor film provided with the crystallization promoting material by heating wherein the metal segregates in the selected region during the crystallization;
• and
• forming an active region of the semiconductor device by etching at least the selected region after the crystallization.

A method of manufacturing a semiconductor device comprising:

• forming a non-single crystalline semiconductor film on an insulating surface;
• directing ions of an element which is inert to the semiconductor film into a selected region thereof;
• disposing a crystallization promoting material in contact with the semiconductor film;
• crystallizing the semiconductor film by heating wherein the metal segregates in the selected region during the crystallization;
• and
• forming an active region of the semiconductor device by removing at least the selected region by etching.